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d u a l e n h a n c e m e n t m o d e f i e l d e f f e c t t r a n s i s t o r ( n a n d p c h a n n e l ) m a y , 2 8 , 2 0 0 7 a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) p a r a m e t e r s y m b o l n - c h a n n e l p - c h a n n e l u n i t d r a i n - s o u r c e v o l t a g e v d s v g a t e - s o u r c e v o l t a g e v g s v d r a i n c u r r e n t - c o n t i n u o u s @ t c - p u l s e d i d 1 1 a a a w i d m d r a i n - s o u r c e d i o d e f o r w a r d c u r r e n t i s m a x i m u m p o w e r d i s s i p a t i o n p d o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e t j , t s t g - 5 5 t o 1 7 5 c a 30 10 -3 0 - 1 5 - 6 1 pr od uc ts u mma ry v ds s i d r ds (o n) (m )m ax 30v 19a @v gs =1 0v @v gs =4 .5 v (n -c ha nne l) pr od uc ts u mma ry v ds s i d - 30v - 15a @v gs =- 10 v @v gs =- 4. 5v (p -c ha nn el ) sa mh op mi cr oe le ct roni cs co rp . 20 -5 0 st u 310d h r ds (o n) (m )m ax 19 50 25 c 70 c tc =2 5c tc =7 0c 7. 7 17 -1 3 a th er ma lc ha ra ct er is ti cs th er ma lr es is ta nc e, ju nc ti on -t o- ca se th er ma lr es is ta nc e, ju nc ti on -t o- am bi en t r jc 13 .6 12 0 r ja /w c /w c n- ch p- ch to - 252- 4l d1 /d 2 s1 g1 s2 g2 20 g 1 d 1 s 1 g 2 d 2 s 2 w w 20 28 30 44
s tu310dh = parameter symbol c ondition min typ max unit off characteristics drain-s ource b reakdown voltage bv ds s = v gs 0v, i d 250ua = 30 v zero g ate voltage drain c urrent i ds s v ds 24v, v gs 0v == 1 gate-body leakage i gss v gs 20v, v ds 0v = = 10 ua on char acte r is tics a g a te t hre s hold v olta ge v gs(th) v ds v gs ,i d = 250ua = v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs 10v, i d 10a v gs 4.5v, i d 8a o n-s ta te d ra in c urre nt i d(on) v ds =5v,v gs =4.5v a s f orward trans conductance fs g v ds 10v, i d 10a dynamic char acte r is tics b input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =15v, v gs =0v f =1.0mh z p f p f p f c = = = = == 5 ua mohm mohm n-channel electrical characteristics (t a 25 c unles s otherwis e noted) 20 97 170 635 16.5 s witc hing c har ac te r is tic s b turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd = 15v i d =1a v gs =10v r gen =6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =15v, i d =20a v gs =10v nc nc nc fall time 2 v ds =15v, i d =20a,v gs =10v nc v ds =15v, i d =20a,v gs =4.5v 12 10 45 12 12.5 3.5 1.8 6 1 1.8 3 14 20 20 28
s tu310dh = parameter symbol c ondition min typ max unit off characteristics drain-s ource b reakdown voltage bv ds s = v gs 0v, i d -250ua = -30 v zero g ate voltage drain c urrent i ds s v ds -24v, v gs 0v == -1 gate-body leakage i gss v gs 20v, v ds 0v = = 10 ua on char acte r is tics a g a te t hre s hold v olta ge v gs(th) v ds v gs ,i d = -250ua = v d ra in-s ourc e o n-s ta te r e s is ta nc e r ds (on) v gs -10v, i d -6a v gs -4.5v, i d -4a o n-s ta te d ra in c urre nt i d(on) v ds =-5v,v gs =-10v a s f orward trans conductance fs g v ds -10v, i d -6a dynamic char acte r is tics b input capacitance c is s c rss c oss o utput c a pa c ita nc e r everse transfer capacitance v ds =-15v, v gs =0v f =1.0mh z p f p f p f c = = = = == 5 ua mohm mohm p-channel electrical characteristics (t a 25 c unles s otherwis e noted) -20 190 280 1120 12.5 s witc hing c har ac te r is tic s b turn-on delay time rise time turn-o ff delay time t d(on) t r t d(off) t f v dd =-15v i d =-1a v gs = -10v r gen =6ohm ns ns ns ns total g ate c harge g ate-s ource c harge gate-drain charge q g q gs q gd v ds =-15v, i d =-20a v gs =-10v nc nc nc fall time 3 v ds =-15v,i d =-20a,v gs =-10v nc v ds =-15v,i d =-20a,v gs =-4.5v 110 28 15 6.5 10.5 -1 22 2.5 30 -1.8 -3 24 30 35 44
figure 2. transfer characteristics f igure 4. o n-r e s is ta nc e va ria tion with drain c urrent and temperature i d , drain c urrent (a) v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance i d , drain c urrent (a) 4 r ds (on) , normalized 42 35 28 21 14 7 0 20 12 8 4 0 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 tj( c) 100 125 v gs =10v i d =10a t j, j unction t emperature ( c ) f igure 1. output c haracteris tics v ds , drain-to-s ource voltage (v ) i d , drain c urrent(a) 45 36 27 18 9 0 0 0.5 1 1.5 2 2.5 3 f igure 3. on-r es is tance vs . drain c urrent and gate voltage 45 1 parameter symbol condition min typ max unit electrical characteristics (t a =25 c unless otherwise noted) drain-source diode characteristics diode forward voltage v sd v gs = 0v, is =10a n-ch 0.9 1.3 -0.9 -1.3 v gs = 0v, is =-6a p-ch v b c notes b.guaranteed by design, not subject to production testing. a.pulse test:pulse width 300 n s, duty cycle 2%. . . n-channel 16 150 s tu310dh v gs =10v v gs =3v v gs =3.5v v gs =4v v gs =4.5v 25 c -55 c tj=125 c 0. 0 0.7 1.4 2.1 2.8 3.5 4.2 9182736 v gs =10v v gs =4.5v v gs =4.5v i d =8a
f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource b reakdown v oltage is, s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v sd , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 5 6 20.0 10.0 1.0 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.20 1.15 1.10 1.05 1.00 0.95 0.90 i d =250ua v gs , gate- s ource voltage (v) r ds (on) ( m ) 48 40 32 24 16 8 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature i d =10a s tu310dh 25 c 125 c 0 0.25 0.50 0.75 1.00 1.25 75 c 25 c 125 c 75 c
6 f igure 13. maximum s afe operating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 100 10 0.5 0.1 1 1103060 v gs =10v s ingle p uls e tc=25 c r d s (on) l imit dc 1s 10 0 m s 10m s 1 m s 80 v gs , g ate to s ource v oltage (v ) f igure 11. g ate c harge qg, total gate charge (nc) 10 8 6 4 2 0 02 4 6 810121416 v ds =15v i d =20a f igure 10. c apacitance v ds , drain-to s ource voltage (v ) c, capacitance (pf) 0 5 10 15 20 25 30 900 750 600 450 300 150 0 ciss coss crss f igure 12.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 100 10 1 1 610 60100 60 600 300 300 t vds =15v,id=1a vgs =10v 6 s tu310dh t rans ient t hermal impedance s quare wave p ulse duration (sec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r n ja (t)=r (t) * r n ja 2. r n ja =s ee datasheet 3. t jm- t a =p dm *r $? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse td(on) tr td(off) tf
0 s tu310dh 7 p-c hannel figure 2. transfer characteristics f igure 4. on-r es is tance variation with drain c urrent and temperature -i d , drain c urrent (a) -v gs , g ate-to-s ource voltage (v ) r ds (on) ( m ) on-resistance -i d , drain c urrent (a) r ds (on) , normalized 78 65 52 39 26 13 0 20 12 8 4 0 1.5 1.4 1.3 1.2 1.1 1.0 0.0 0 25 50 75 tj( c) 150 100 125 v gs =-4.5v i d =-4a tj, junction temperature ( c) f igure 1. output c haracteris tics -v ds , drain-to-s ource voltage (v ) -i d , drain c urrent(a) 35 28 21 14 7 0 0.5 1 1.5 2 2.5 3 f igure 3. on-r esistance vs. drain c urrent and gate voltage v gs =-10v i d =-6a 16 v gs =10v v gs =3v v gs =3.5v v gs =4v v gs =4.5v -55 c tj=125 c 0. 0 0.7 1.4 2.1 2.8 3.5 4.2 25 c 35 1 7142128 v gs =10v v gs =4.5v
f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hreshold v oltage bv ds s , normalized drain-s ource b reakdown v oltage -is, s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent -v sd ,bodydiodeforwardvoltage(v) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 8 6 20.0 10.0 1.0 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua -v gs , gate- s ource voltage (v) r ds (on) ( m ) 78 65 52 39 26 13 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 24 68 10 0 f igure 5. g ate t hreshold v ariation with t emperature i d =-6a s tu310dh 25 c 125 c 75 c 25 c 125 c 75 c 0 0.25 0.50 0.75 1.00 1.25
100 10 1 1 610 60100 60 600 300 500 vds =-15v,id=-1a vgs =-10v 6 -v gs , g ate to s ource v oltage (v ) f igure 11. g ate c harge qg, total gate charge (nc) 10 8 6 4 2 0 v ds =-15v i d =-20a f igure 10. c apacitance -v ds , drain-to s ource voltage (v ) c, capacitance (pf) 0 5 10 15 20 25 30 1500 1250 1000 750 500 250 0 ciss coss crss 9 f igure 13. maximum s afe operating area -v ds , drain-s ource v oltage (v ) -i d , drain c urrent (a) 70 50 10 1 0.03 0.1 1 10 30 60 r ds (o n) li m it v gs =-10v single pulse tc=25 c 10 ms 1 00 m s 1s d c s tu310dh transient thermal impedance s quare wave p ulse duration (sec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r %? ja (t)=r (t) * r %? ja 2. r %? ja =s ee datas heet 3. t jm- t a =p dm *r $? ja (t) 4. duty cycle, d=t 1 /t 2 single pulse f igure 12.s witching characteris tics rg,gateresistance( ) s witching t ime (ns ) 0 3 6 912 15 18 21 24 td(on) tr td(off) tf
10 s tu310dh a b c m d g s p h j k l millimeters mi n ma x a 6.40 6.80 b 5.2 5.50 c 6.80 10.20 d 2.20 3.00 p s 0.50 0.80 g 0.40 0.60 h 2.20 2.40 j 0.45 0.60 k 0 0.15 l 0.90 1.50 m 5.40 5.80 ref . 1.27 ref . to-252-4l pack age outline dime ns ions
to-252-4l to-252-4l carrier tape to-252-4 l r eel tape and reel data unit: 1 11 STU310DH :o :j

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